Subthreshold swing is a measure of the efficiency of a transistor in switching between on and off states. It refers to the change in gate voltage required to change the current in the transistor from subthreshold to above-threshold levels. A smaller subthreshold swing indicates a more efficient transistor, as it requires less energy to switch between these states. It is an important parameter in low-power and high-performance electronics, as it affects the speed and power consumption of the device. The subthreshold swing is influenced by factors such as gate oxide thickness, channel doping, and temperature. Reducing subthreshold swing is an ongoing area of research and development in semiconductor technology.
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